Challenges of high Ge content silicon germanium structures
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference20 articles.
1. Lattice Parameter and Density in Germanium-Silicon Alloys1
2. Test of Vegard's law in thin epitaxial SiGe layers
3. Misfit dislocation energy in epitaxial overgrowths of finite thickness
4. Silicium germanium heterodevices
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1. Electronic properties of Si/Si-Ge Alloy/Si(100) heterostructures formed by ECR Ar plasma CVD without substrate heating;Materials Science in Semiconductor Processing;2017-11
2. Optical properties of Ge-richGe1−xSixalloys: Compositional dependence of the lowest direct and indirect gaps;Physical Review B;2016-03-09
3. Very low-temperature epitaxial growth of Mn5Ge3 and Mn5Ge3C0.2 films on Ge(111) using molecular beam epitaxy;Thin Solid Films;2015-08
4. Low temperature epitaxial growth of SiGe absorber for thin film heterojunction solar cells;Solar Energy Materials and Solar Cells;2015-03
5. Strain and Stability of Ultrathin Ge Layers in Si/Ge/Si Axial Heterojunction Nanowires;Nano Letters;2015-02-12
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