Strain and Stability of Ultrathin Ge Layers in Si/Ge/Si Axial Heterojunction Nanowires-Reference-Cited by-同舟云学术

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Strain and Stability of Ultrathin Ge Layers in Si/Ge/Si Axial Heterojunction Nanowires

Published:2015-02-12 Issue:3 Volume:15 Page:1654-1659
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Wen Cheng-Yen¹,Reuter Mark C.²,Su Dong³,Stach Eric A.³,Ross Frances M.²

Affiliation:

1. Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan

2. IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States

3. Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, United States

Funder

Division of Materials Research

Basic Energy Sciences

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl504241g

Reference48 articles.

1. Strained-Layer Epitaxy of Germanium-Silicon Alloys

2. Strain distributions and electronic property modifications in Si/Ge axial nanowire heterostructures

3. Synthesis, assembly and applications of semiconductor nanomembranes

4. Challenges of high Ge content silicon germanium structures

5. Influence of strain on semiconductor thin film epitaxy

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1. 3D Shape Reconstruction of Ge Nanowires during Vapor–Liquid–Solid Growth under Modulating Electric Field;ACS Nano;2024-08-12

2. The effect of electron–phonon and electron-impurity scattering on the electronic transport properties of silicon/germanium superlattices;Journal of Materials Chemistry C;2022

3. Moiré Fringe Method via Scanning Transmission Electron Microscopy;Small Methods;2021-11-25

4. Strain Characterization in Two-Dimensional Crystals;Materials;2021-08-09

5. First-principles prediction of electronic transport in fabricated semiconductor heterostructures via physics-aware machine learning;npj Computational Materials;2021-06-17

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