Ultrahigh current and ultralow power dissipation of Janus monolayer IIIA-VIA Ga2XY MOSFETs
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
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1. Modulating the Rectification Effect of MoTe₂ Monolayer by Substitutional Doping;IEEE Transactions on Electron Devices;2024-09
2. Tuning the electronic and piezoelectric properties of Janus Ga2XY (X/Y S, Se, Te) monolayers: A first-principles calculation;Materials Science in Semiconductor Processing;2024-08
3. Sub-5 nm bilayer GaSe MOSFETs towards ultrahigh on-state current;Frontiers of Physics;2024-04-04
4. Interface-controlled band alignments in Janus Ga2STe/MoSi2N4 vdWHs;Physica B: Condensed Matter;2023-10
5. A graphene/Janus B2P6 heterostructure with a controllable Schottky barrier via interlayer distance and electric field;Physical Chemistry Chemical Physics;2023
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