Modulating the Rectification Effect of MoTe₂ Monolayer by Substitutional Doping-Reference-Cited by-同舟云学术

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Modulating the Rectification Effect of MoTe₂ Monolayer by Substitutional Doping

Published:2024-09 Issue:9 Volume:71 Page:5725-5731
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Fang¹,Liu Kai²^ORCID,Guo Caixia²^ORCID,Wang Tianxing³^ORCID

Affiliation:

1. College of Electronic and Electrical Engineering and the Key Laboratory Optoelectronic Sensing Integrated Application of Henan Province, Henan Normal University, Xinxiang, China

2. College of Electronic and Electrical Engineering, Henan Normal University, Xinxiang, China

3. Department of Physics, Henan Normal University, Xinxiang, China

Funder

Technology Project of Henan Province

Key Science Research Project of Higher Education Institutions in Henan Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10645717/10605995.pdf?arnumber=10605995

Reference35 articles.

1. Regulating the rectifying effect of zigzag germanium selenide nanoribbons by selective edge decoration

2. Current rectification induced by V-doped and Sc-doped in Ti2CO2 devices

3. Rectifying behavior and transport mechanisms of currents in Pt/BaTiO3/Nb:SrTiO3 structure

4. Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode

5. Nanodevice design and electronic transport properties of Ge2Sb2-based monolayers

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