High storage and operational stability self-powered UV photodetector based on p-CuI/n-GaN heterojunction prepared by thermal evaporation method
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
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4. Two-In-One: End-emitting blue LED and self-powered UV photodetector based on single trapezoidal PIN GaN microwire for ambient light UV monitoring and feedback;Chen;Small Methods.,2023
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1. The influence of deposition pressure on the physical properties of Ga2O3 films and the high responsivity self-powered DUV photodetector based on n-Ga2O3/CuO/p-GaN heterojunction;Optics & Laser Technology;2025-01
2. High-performance self-biased Cu/SiC/Si photo-sensor with swift response for NIR/Vis photodetection;Applied Surface Science;2024-08
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4. The impact of thickness-related grain boundary migration on hole concentration and mobility of p-type transparent conducting CuI films;RSC Advances;2024
5. The Influence of Deposition Pressure on the Physical Properties of Ga2o3 Films and the High Responsivity Self-Powered Duv Photodetector Based on N-Ga2o3/Cuo/P-Gan Heterojunction;2024
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