Ion energy dependence of dry etch damage depth in Ga2O3 Schottky rectifiers-Reference-Cited by-同舟云学术

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Ion energy dependence of dry etch damage depth in Ga2O3 Schottky rectifiers

Published:2023-09 Issue: Volume:631 Page:157489
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Chiang Chao-Ching^ORCID,Xia Xinyi,Li Jian-Sian,Ren Fan,Pearton S.J.^ORCID

Funder

NSF

National Science Foundation

U.S. Department of Defense

Defense Threat Reduction Agency

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference50 articles.

1. Materials issues and devices of α- and β-Ga2O3;Ahmadi;J. Appl. Phys,2019

2. Pearton and Jihyun Kim Deep level defect states in β-, α- and ɛ-Ga2O3 crystals and films: Impact on device performance;Polyakov;J. Vac. Sci. Technol. A,2022

3. Role of self-trapping in luminescence and p-type conductivity of wide-band-gap oxides;Varley;Phys. Rev. B,2012

4. Computational Fermi level engineering and doping-type conversion of Mg:Ga2O3 via three-step synthesis process;Goyal;J. Appl. Phys.,2021

5. Heterojunction p-Cu2O/n-Ga2O3 diode with high breakdown voltage;Watahiki;Appl. Phys. Lett.,2017

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Breakdown up to 13.5 kV in NiO/β-Ga₂O₃ Vertical Heterojunction Rectifiers;ECS Journal of Solid State Science and Technology;2024-03-27

2. Selective and nonselective plasma etching of (Al0.18Ga0.82)2O3/ Ga2O3 heterostructures;Journal of Vacuum Science & Technology A;2024-02-14

3. Effect of Dry Etching to Improve Ohmic Contacts on Bulk, Lightly-Doped β-Ga₂O₃;ECS Journal of Solid State Science and Technology;2024-01-01

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