Heterojunction p-Cu2O/n-Ga2O3 diode with high breakdown voltage-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Heterojunction p-Cu2O/n-Ga2O3 diode with high breakdown voltage

Published:2017-11-27 Issue:22 Volume:111 Page:222104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Watahiki Tatsuro¹,Yuda Yohei¹,Furukawa Akihiko¹,Yamamuka Mikio¹,Takiguchi Yuki²^ORCID,Miyajima Shinsuke³

Affiliation:

1. Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, 661-8661 Hyogo, Japan

2. Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8550, Japan

3. School of Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8550, Japan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4998311

Reference30 articles.

1. Valence band ordering in β-Ga2O3studied by polarized transmittance and reflectance spectroscopy

2. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

3. $\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates

4. 1-kV vertical Ga2O3 field-plated Schottky barrier diodes

5. High-mobility β-Ga2O3($\bar{2}01$) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact

Cited by 156 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advances and prospects in Ga2O3/GaN heterojunctions: From fabrication to high-performance devices;Materials Science in Semiconductor Processing;2025-01

2. The influence of oxygen partial pressure on the properties of sputtered vertical NiO/β-Ga2O3 heterojunction diodes;Materials Science in Semiconductor Processing;2024-12

3. High performance E-mode NiO/β-Ga2O3 HJ-FET with high conduction band offset and thin recessed channel;Micro and Nanostructures;2024-11

4. Impact of Channel Thickness and Doping Concentration for Normally-Off Operation in Sn-Doped β-Ga2O3 Phototransistors;Sensors;2024-09-07

5. Novel superjunction Fin-based NiO/β-Ga2O3 HJFET with additional surface drift region channels for record-high performance;Microelectronics Journal;2024-09

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3