Quantitative analysis of graded Cu(In1−x,Gax)Se2 thin films by AES, ICP-OES, and EPMA

Author:

Perkins Craig L.,Egaas Brian,Repins Ingrid,To Bobby

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference27 articles.

1. 19.9%-efficient ZnO/CdS/CuInGaSe2 solar cell with 81.2% fill factor;Repins;Progress in Photovoltaics,2008

2. Band-gap grading in Cu(In,Ga)Se2 solar cells;Gloeckler;Journal of Physics and Chemistry of Solids,2005

3. Material considerations for terawatt level deployment of photovoltaics;Feltrin;Renewable Energy,2008

4. CuIn1−xGaxSe2-based thin film solar cells by the selenization of sequentially evaporated metallic layers;Caballero;Progress in Photovoltaics,2006

5. Effects of junction parameters on Cu(In,Ga)Se2 solar cells;Huang;Journal of Physics and Chemistry of Solids,2008

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