CuIn1−xGaxSe2-based thin-film solar cells by the selenization of sequentially evaporated metallic layers-Reference-Cited by-同舟云学术

CuIn1−xGaxSe2-based thin-film solar cells by the selenization of sequentially evaporated metallic layers

Published:2006 Issue:2 Volume:14 Page:145-153
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Caballero R.,Guillén C.,Gutiérrez M. T.,Kaufmann C. A.

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference21 articles.

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2. Material properties of Cu(In, Ga)Se2thin films prepared by the reaction of thermally evaporated compound materials in H2Se/Ar

3. , , . Formation of CuInSe2 thin films by thermal diffusion of selenium into Cu-In layers. Proceedings of the 17th European Photovoltaic Solar Energy Conference and Exhibition, Munich, 2001; 1086.

4. , , . Proceedings of the 3rd World Conference Photovoltaic Energy Conversion, Osaka, Japan, 2003; 325.

5. Material and device properties of single-phase Cu(In,Ga)(Se,S)2 alloys prepared by selenization/sulfurization of metallic alloys

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