Confined selective lateral epitaxial growth of 16-nm thick Ge nanostructures on SOI substrates: Advantages and challenges-Reference-Cited by-同舟云学术

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Confined selective lateral epitaxial growth of 16-nm thick Ge nanostructures on SOI substrates: Advantages and challenges

Published:2018-07 Issue: Volume:445 Page:77-80
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Khazaka Rami^ORCID,Bogumilowicz Yann,Rouchon Denis,Boutry Hervé,Chalupa Zdenek,Lapras Valérie,Prévitali Bernard,Chevalier Nicolas,Papon Anne Marie,David Sylvain,Maitrejean Sylvain

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference19 articles.

1. High-mobility GaSb nanostructures cointegrated with InAs on Si;Borg;ACS Nano,2017

2. Turning the undesired voids in silicon into a tool: in-situ fabrication of free-standing 3C-SiC membranes;Khazaka;Appl. Phys. Lett.,2017

3. Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si;Colace;Appl. Phys. Lett.,1998

4. Analysis of enhanced light emission from highly strained germanium microbridges;Süess;Nat. Photonics,2013

5. Direct insight into grains formation in Si layers grown on 3C-SiC by chemical vapor deposition;Khazaka;Acta Materialia,2015

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Local lateral integration of 16-nm thick Ge nanowires on silicon on insulator substrates;Applied Physics Letters;2018-06-11

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