Growth behavior of high k LaAlO 3 films on Si by metalorganic chemical vapor deposition for alternative gate dielectric application-Reference-Cited by-同舟云学术

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Growth behavior of high k LaAlO 3 films on Si by metalorganic chemical vapor deposition for alternative gate dielectric application

Published:2005-08 Issue:1-4 Volume:250 Page:14-20
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Shao Qi-Yue,Li Ai-Dong,Cheng Jin-Bo,Ling Hui-Qin,Wu Di,Liu Zhi-Guo,Bao Yong-Jun,Wang Mu,Ming Nai-Ben,Wang Cathy,Zhou Hong-Wei,Nguyen Bich-Yen

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference25 articles.

1. Semiconductor Industry Association, the International Technology Roadmap for Semiconductors, 2002.

2. Scaling the gate dielectric: Materials, integration, and reliability

3. High-κ gate dielectrics: Current status and materials properties considerations

4. Thermodynamic stability of binary oxides in contact with silicon

5. Interfacial and bulk properties of zirconium dioxide as a gate dielectric in metal–insulator–semiconductor structures and current transport mechanisms

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Metal‐Organic Chemical Vapor Deposition of Oxide Perovskite Films: A Facile Route to Complex Functional Systems;Advanced Materials Interfaces;2022-04-15

2. Structure, morphology and I–V characteristics of thermally evaporated LaAlO3 nanostructured thin films;Journal of Materials Science: Materials in Electronics;2021-10-08

3. Ni doping significantly improves dielectric properties of La2O3 films;Journal of Alloys and Compounds;2020-05

4. Effect of Fe impurity on performance of La2O3 as a high k gate dielectric;Ceramics International;2019-11

5. The influence of process parameters and pulse ratio of precursors on the characteristics of La1 − x Al x O3 films deposited by atomic layer deposition;Nanoscale Research Letters;2015-04-14

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