Interfacial and bulk properties of zirconium dioxide as a gate dielectric in metal–insulator–semiconductor structures and current transport mechanisms-Reference-Cited by-同舟云学术

Interfacial and bulk properties of zirconium dioxide as a gate dielectric in metal–insulator–semiconductor structures and current transport mechanisms

Published:2003-04-15 Issue:8 Volume:93 Page:4788-4793
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chim W. K.,Ng T. H.,Koh B. H.,Choi W. K.,Zheng J. X.,Tung C. H.,Du A. Y.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1561995

Reference13 articles.

1. Analysis of leakage currents and impact on off-state power consumption for CMOS technology in the 100-nm regime

2. Percolation models for gate oxide breakdown

3. Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric

4. Structural and electrical properties of HfO2 with top nitrogen incorporated layer

5. Hafnium and zirconium silicates for advanced gate dielectrics

Cited by 40 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Innovative approach of growing thulium oxide passivation layer in nitrogen/oxygen/nitrogen ambient;Materials Letters;2022-09

2. Overview study on the characterization of zirconia as a function of calcination temperature;Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XXII;2021-04-12

3. Local Structure of Zr(OH)4 and the Effect of Calcination Temperature from X-ray Pair Distribution Function Analysis;Inorganic Chemistry;2018-02-21

4. Effect of microwave annealing on electrical characteristics of TiN/Al/TiN/HfO2/Si MOS capacitors;Applied Physics Letters;2017-07-03

5. Current transport analysis of ZrO2 thin films: Effects of post-deposition annealing;Journal of the Korean Physical Society;2014-12