Atomic layer deposition of HfO2 thin films using H2O2 as oxidant-Reference-Cited by-同舟云学术

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Atomic layer deposition of HfO2 thin films using H2O2 as oxidant

Published:2014-05 Issue: Volume:301 Page:451-455
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Choi Min-Jung,Park Hyung-Ho,Jeong Doo Seok,Kim Jeong Hwan,Kim Jin-Sang,Kim Seong Keun

Funder

MOTIE (Ministry of Trade, Industry & Energy)

KSRC (Korea Semiconductor Research Consortium) and by the Korea Institute of Science and Technology

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference17 articles.

1. Thermodynamic stability of binary oxides in contact with silicon

2. High dielectric constant oxides

3. Chemical interaction between atomic-layer-deposited HfO2 thin films and the Si substrate

4. Ferroelectricity in hafnium oxide thin films

5. Ferroelectricity in Simple Binary ZrO2 and HfO2

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interfacial layer suppression in ZrO2/TiN stack structured capacitors via atomic layer deposition;Ceramics International;2024-09

2. Comparison of H2O2 and H2O oxidations on TDMAT absorbed on silicon(100) surface during reaction step of ALD–TiO2 process: A DFT study;Materials Today Communications;2024-03

3. Reduced leakage current in atomic-layer-deposited HfO2 thin films deposited at low temperature by in-situ defect passivation;Applied Surface Science;2024-02

4. Enhanced physical and electrical properties of HfO2 deposited by atomic layer deposition using a novel precursor with improved thermal stability;Surfaces and Interfaces;2023-11

5. Toward Low-Thermal-Budget Hafnia-Based Ferroelectrics via Atomic Layer Deposition;ACS Applied Electronic Materials;2023-09-07

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