Preparation of rare-earth thulium doped tin-oxide thin films and their applications in thin film transistors-Reference-Cited by-同舟云学术

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Preparation of rare-earth thulium doped tin-oxide thin films and their applications in thin film transistors

Published:2019-11 Issue: Volume:493 Page:63-69
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Ren Jin-hua,Huang Yu-ting,Li Kai-wen,Shen Jie,Zeng Wan-yu,Sheng Chu-ming,Shao Jing-jing,Han Yan-bing,Zhang Qun

Funder

Science and Technology Commission of Shanghai Municipality

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference52 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors;Nomura;Nature,2004

2. Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability;Kizu;Appl. Phys. Lett.,2014

3. Subgap states, doping and defect formation energies in amorphous oxide semiconductor a-InGaZnO4 studied by density functional theory;Kamiya;Phys. Status Solidi A,2010

4. Stability of amorphous indium-tungsten oxide thin-film transistors under various wavelength light illumination;Yang;Ieee Electr Device L,2016

5. Abundances of chemical elements in the Earth's crust;Yaroshevsky;Geochem. Int.,2006

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