GaN films deposited by middle-frequency magnetron sputtering-Reference-Cited by-同舟云学术

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GaN films deposited by middle-frequency magnetron sputtering

Published:2007-09 Issue:23 Volume:253 Page:9077-9080
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Zou C.W.,Yin M.L.,Li M.,Guo L.P.,Fu D.J.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference13 articles.

1. Near-field cathodoluminescence studies onn-doped gallium nitride films

2. Field emission from amorphous GaN deposited on Si by dc sputtering

3. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

4. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

5. High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A low-cost and convenient route of fabricating GaN films with P-type mixed microcrystalline and amorphous structure deposited via Ga target of magnetron sputtering;APL Materials;2024-08-01

2. Studies on High Quality Gan/Aln Deposited on Glass Substrates by Radio-Frequency Reactive Sputtering;2024

3. Influences of different sputtering current on the microstructure and electrical properties of silicon nitride thin films deposited on cemented carbide tools;Ceramics International;2021-11

4. Substrates Effect on the Phase Transition of GaN Thin Films by Sputter Deposition;Materials Science Forum;2019-09

5. Structural, electronic and mechanical properties of single-walled AlN and GaN nanotubes via DFT/B3LYP;Theoretical Chemistry Accounts;2019-01-28

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