Memory programming of TiO2−x films by Conductive Atomic Force Microscopy evidencing filamentary resistive switching-Reference-Cited by-同舟云学术

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Memory programming of TiO2−x films by Conductive Atomic Force Microscopy evidencing filamentary resistive switching

Published:2015-03 Issue: Volume:332 Page:55-61
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Bousoulas P.^ORCID,Giannopoulos J.,Giannakopoulos K.,Dimitrakis P.,Tsoukalas D.

Funder

“Aristeia II”

European Union (European Social Fund ESF)

Greek national funds through the Operational Program “Education and Lifelong Learning” of the National Strategic Reference Framework (NSRF)

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference27 articles.

1. Vacancy cohesion-isolation phase transition upon charge injection and removal in binary oxide-based RRAM filamentary-type switching;Kamiya;IEEE Tran. Elec. Dev.,2013

2. Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory;Lee;Nano Lett.,2009

3. Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO2/Pt structures;Iglesias;Microel. Reliab.,2012

4. A study of copper oxide based resistive switching memory by conductive atom force microscope;Zhoua;Appl. Surf. Sci.,2013

5. Charge transport mechanisms and memory effects in amorphous TaNx thin films;-Antonakakis;Nanosc. Res. Lett.,2013

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1. The creation of defects in Cu-doped TiO2 memristive devices;MRS Communications;2024-09-06

2. Comparative analysis of low-frequency noise based resistive switching phenomenon for filamentary and interfacial RRAM devices;Chaos, Solitons & Fractals;2023-08

3. Effect of annealing treatment on the microstructure and current carrying tribological properties of in-situ formed TiO2−x coating prepared by plasma spraying;Tribology International;2022-11

4. Material design strategies for emulating neuromorphic functionalities with resistive switching memories;Japanese Journal of Applied Physics;2022-08-18

5. Neuromorphic Dynamics at the Nanoscale in Silicon Suboxide RRAM;Frontiers in Nanotechnology;2021-12-22

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