Physical and electrical characteristics of a high-k Yb2O3 gate dielectric
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference15 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Segregation of oxygen vacancy at metal-HfO2 interfaces
3. Oxygen defect accumulation at Si:HfO2 interfaces
4. High ε gate dielectrics Gd2O3 and Y2O3 for silicon
5. Vibrational and electrical properties of hexagonal La2O3 films
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