Carrier gas effects on the SiGe quantum dots formation-Reference-Cited by-同舟云学术

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Carrier gas effects on the SiGe quantum dots formation

Published:2008-07 Issue:19 Volume:254 Page:6257-6260
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Lee C.-H.,Yu C.-Y.,Lin C.M.,Liu C.W.,Lin H.,Chang W.-H.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference18 articles.

1. Temperature effect on the formation of uniform self-assembled Ge dots

2. Influence of the wetting-layer growth kinetics on the size and shape of Ge self-assembled quantum dots on Si(001)

3. Shape change of SiGe islands with initial Si capping

4. Growth of high-quality SiGe films with a buffer layer containing Ge quantum dots

5. Low‐temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A transition of three to two dimensional Si growth on Ge (100) substrate;Journal of Applied Physics;2012-12-15

2. Ge out diffusion effect on SiGe nanoring formation;Journal of Applied Physics;2012-04

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