A transition of three to two dimensional Si growth on Ge (100) substrate
Author:
Funder
National Science Council Taiwan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4770408
Reference20 articles.
1. Enhancement of hole mobility and carrier density in Ge quantum well of SiGe heterostructure via implementation of double-side modulation doping
2. Ge/SiGe multiple quantum well photodiode with 30 GHz bandwidth
3. Ge quantum dot tunneling diode with room temperature negative differential resistance
4. Improvement of infrared detection using Ge quantum dots multilayer structure
5. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
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1. Atomic and electronic structures of Si/Ge(100) interfaces studied by high-resolution photoelectron spectroscopy and scanning tunneling microscopy;Physical Review B;2021-05-21
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4. Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing;Surface Science;2019-05
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