Growth and modification of thin a-Si:H/a-Ge:H bi-layers to sacrificial c-SiGe alloys through ArF-Excimer laser assisted processing-Reference-Cited by-同舟云学术

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Growth and modification of thin a-Si:H/a-Ge:H bi-layers to sacrificial c-SiGe alloys through ArF-Excimer laser assisted processing

Published:2008-07 Issue:19 Volume:254 Page:6030-6033
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Chiussi S.,Gontad F.,Rodríguez R.,Serra C.,Serra J.,León B.,Sulima T.,Höllt L.,Eisele I.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference8 articles.

1. UV-laser-assisted processing of thin silicon–germanium–carbon films

2. High resolution electron microscopy and x-ray photoelectron spectroscopy studies of heteroepitaxial SixGe(1−x) alloys produced through laser induced processing

3. Excimer Laser annealing for shallow junction formation in Si power MOS devices

4. Analysis of excimer laser annealing of amorphous SiGe on La2O3//Si structures

5. XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFT's

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1. Pulsed 193 nm Excimer laser processing of 4H–SiC (0001) wafers with radiant exposure dependent in situ reflectivity studies for process optimization;Materials Science in Semiconductor Processing;2023-12

2. ToF-SIMS of femtosecond laser irradiated muscovite with topography: Evidence of Na and K enrichment near the surface;Applied Surface Science;2021-11

3. 193 nm Excimer laser processing of Si/Ge/Si(100) micropatterns;Applied Surface Science;2016-01

4. Selective Chemical Wet Etching of Si0.8Ge0.2/Si Multilayer;JSTS:Journal of Semiconductor Technology and Science;2013-12-31

5. Light induced crystallization of an amorphous silicon film embedded between silicon oxide layers;physica status solidi (b);2013-10-01

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