Interfacial charge transfers and interactions drive rectifying and negative differential resistance behaviors in InAs/graphene van der Waals heterostructure-Reference-Cited by-同舟云学术

Interfacial charge transfers and interactions drive rectifying and negative differential resistance behaviors in InAs/graphene van der Waals heterostructure

Published:2019-12 Issue: Volume:496 Page:143629
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Ning Feng,Chen Shi-Zhang,Zhang Yong,Liao Gao-Hua,Tang Ping-Ying,Li Zheng-Liang,Tang Li-Ming

Funder

National Natural Science Foundation of China

Natural Science Foundation of Guangxi Province

Hunan Provincial Natural Science Foundation of China

Hunan Provincial Education Department of China

Open Project of Key Laboratory of New Electric Functional Materials of Guangxi Colleges and Universities

Scientific Research Fund of Hunan Provincial Education Department

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference70 articles.

1. 2D materials and van der Waals heterostructures;Novoselov;Science,2016

2. Van der Waals heterostructures;Geim;Nature,2013

3. Recent progress in van der Waals heterojunctions;Xia;Nanoscale,2017

4. Van der Waals heterostructures and devices;Liu;Nat. Rev. Mater.,2016

5. Seeking the Dirac cones in the MoS2/WSe2 van der Waals heterostructure;Li;Appl. Phys. Lett.,2017

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