Adsorption properties of AlN on Si(111) surface: A density functional study-Reference-Cited by-同舟云学术

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Adsorption properties of AlN on Si(111) surface: A density functional study

Published:2018-04 Issue: Volume:436 Page:50-57
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Yuan Yinmei,Zuo Ran,Mao Keke,Tang Binlong,Zhang Zhou,Liu Jun,Zhong Tingting

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference15 articles.

1. Characterization of crystal lattice constant and dislocation density of crack-free GaN films grown on Si(111);Xiong;Appl. Surf. Sci.,2010

2. Thermal stability of N-polar n-type Ohmic contact for GaN-based light emitting diode on Si substrate;Liu;Thin Solid Films,2012

3. Strain analysis of the GaN epitaxial layers grown on nitridated Si(111) substrate by metal organic chemical vapor deposition;Ozturk;Mater. Sci. Semicond. Process.,2013

4. Effect of buffer layer on the growth of GaN on Si substrate;Lee;J. Cryst. Growth,2002

5. Mechanism of TMAl pre-seeding in AlN epitaxy on Si(111) substrate;Bao;Vacuum,2014

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Limits of the Post‐Growth Optimization of AlN Thin Films Grown on Si(111) via Magnetron Sputtering;physica status solidi (b);2019-12-15

2. A DFT study of dimethyl carbonate synthesis from methanol and CO2 on zirconia: Effect of crystalline phases;Computational Materials Science;2019-03

3. First-principles study on the diffusion dynamics of Al atoms on Si surface;Acta Physica Sinica;2019

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