Strain analysis of the GaN epitaxial layers grown on nitridated Si(111) substrate by metal organic chemical vapor deposition-Reference-Cited by-同舟云学术

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Strain analysis of the GaN epitaxial layers grown on nitridated Si(111) substrate by metal organic chemical vapor deposition

Published:2013-02 Issue:1 Volume:16 Page:83-88
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Ozturk Mustafa K.,Arslan Engin,Kars İlknur,Ozcelik Suleyman,Ozbay Ekmel

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference36 articles.

1. AlGaN/AlN/GaN high-power microwave HEMT

2. MOVPE growth of GaN on Si(111) substrates

3. The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate

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