Schottky diode behaviour with excellent photoresponse in NiO/FTO heterostructure-Reference-Cited by-同舟云学术

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Schottky diode behaviour with excellent photoresponse in NiO/FTO heterostructure

Published:2017-10 Issue: Volume:418 Page:328-334
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Saha B.,Sarkar K.,Bera A.,Deb K.,Thapa R.

Funder

Department of Science and Technology

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference53 articles.

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2. Surface passivation technology for III-V semiconductor nanoelectronics;Hasegawa;Appl. Surf. Sci.,2008

3. High-temperature annealing of TiO2 nanotube membranes for efficient dye-sensitized solar cells;Mohammadpour;Semicond. Sci. Technol.,2016

4. In plane conducting channel at the interface of CdO–ZnO isotype thin film heterostructure;Bera;J. Alloys Compd.,2015

5. High-performance WSe2 complementary metal oxide semiconductor technology and integrated circuits;Yu;Nano Lett.,2015

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