Optimization of parameters for deposition of Ga-doped ZnO films by DC reactive magnetron sputtering using Taguchi method-Reference-Cited by-同舟云学术

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Optimization of parameters for deposition of Ga-doped ZnO films by DC reactive magnetron sputtering using Taguchi method

Published:2011-05 Issue:14 Volume:257 Page:6125-6128
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Bie Xun,Lu Jianguo,Wang Yuping,Gong Li,Ma Quanbao,Ye Zhizhen

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference26 articles.

1. Applications and Processing of Transparent Conducting Oxides

2. Carrier concentration dependence of band gap shift in n-type ZnO:Al films

3. Magnetron sputtering of transparent conductive zinc oxide: relation between the sputtering parameters and the electronic properties

4. Preparation and characterization of high-performance direct current magnetron sputtered ZnO:Al films

5. Influence of Ar/O2 ratio on the properties of transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering

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1. Improvement of Saturation Magnetization of Sputtered Fe/Al Multilayer Thin Films Using Taguchi Method Supported by ANOVA, Response Surface Methodology and Regression Analysis;Acta Physica Polonica A;2023-05

2. Synthesis and optimization of SnS absorber layer by spin-coating process and Taguchi approach;Materials Chemistry and Physics;2022-12

3. High optoelectronic performance of magnetron sputtered ZnO thin ﬁlms co-doped with F and Ga: Experiment and ﬁrst-principles calculations;Materials Research Bulletin;2021-06

4. Application of Taguchi arrays using DOE for optimizing processing and understanding sputtered coated ZnO TFTs;Materials Today: Proceedings;2021

5. Improvement of the storage ability of Si-rich oxide layer in poly-Si based nonvolatile memory devices by implementation of taguchi method;Semiconductor Science and Technology;2019-08-28

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