Carrier concentration dependence of band gap shift in n-type ZnO:Al films-Reference-Cited by-同舟云学术

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Carrier concentration dependence of band gap shift in n-type ZnO:Al films

Published:2007-04-15 Issue:8 Volume:101 Page:083705
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lu J. G.,Fujita S.,Kawaharamura T.,Nishinaka H.,Kamada Y.,Ohshima T.,Ye Z. Z.,Zeng Y. J.,Zhang Y. Z.,Zhu L. P.,He H. P.,Zhao B. H.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2721374

Reference41 articles.

1. Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films

2. Band-gap tailoring of ZnO by means of heavy Al doping

3. Structural, electrical and optical properties of aluminum doped zinc oxide films prepared by radio frequency magnetron sputtering

4. Al-doped zinc oxide films deposited by simultaneous rf and dc excitation of a magnetron plasma: Relationships between plasma parameters and structural and electrical film properties

5. Transparent conducting Zn1−xMgxO:(Al,In) thin films

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