Interface characterization and indium content of indium-rich quantum dots in InGaN/GaN multiple quantum wells-Reference-Cited by-同舟云学术

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Interface characterization and indium content of indium-rich quantum dots in InGaN/GaN multiple quantum wells

Published:2006-03 Issue:11 Volume:252 Page:3922-3927
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Liu Chuan-Pu,Lai Yen-Lin,Chen Zheng-Quan

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference11 articles.

1. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices

2. Shortest wavelength semiconductor laser diode

3. Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD

4. Solid phase immiscibility in GaInN

5. Phase separation and ordering coexisting in InxGa1−xN grown by metal organic chemical vapor deposition

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modelling of microcavity effect in InGaN/GaN heterostructures for interfacial study;Materials Research Express;2018-07-17

2. Growth and characterization of quaternary AlInGaN multiple quantum wells with different aluminum composition;Applied Surface Science;2014-05

3. Structure and strain state of polar and semipolar InGaN quantum dots;Applied Surface Science;2012-11

4. Composition mapping in InGaN by scanning transmission electron microscopy;Ultramicroscopy;2011-07

5. Hydrostatic pressure effect on the donor impurity states in asymmetric multiple quantum wells;Superlattices and Microstructures;2011-04

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