Hydrostatic pressure effect on the donor impurity states in asymmetric multiple quantum wells
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference21 articles.
1. Hydrogenic impurity states in a quantum well: A simple model
2. Electric-field effects on confined hydrogenic impurities in semiconductors
3. Stark shift of hydrogenic impurity states in a quantum well
4. Binding energy of a confined hydrogenic impurity in a semiconductor quantum well
5. Simultaneous effects of hydrostatic stress and an electric field on donors in a GaAs-(Ga, Al)As quantum well
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Pressure-related binding energy in (In,Ga)N/GaN double quantum wells under internal composition effects;Solid State Communications;2021-03
2. The Effects on Electric Field and Hydrostatic Pressure on the Doped Properties in a Strained (In,Ga)N-GaN Coupled Quantum Wells;Journal of Nanoelectronics and Optoelectronics;2021-01-01
3. Donor Impurity States in Semiconductor Zincblende Nitride Quantum Systems as a Source of Nonlinear Optical Response;Journal of Nanoscience and Nanotechnology;2017-02-01
4. Exciton-related optical properties in zinc-blende GaN/InGaN quantum wells under hydrostatic pressure;physica status solidi (b);2015-02-12
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