Structure and strain state of polar and semipolar InGaN quantum dots-Reference-Cited by-同舟云学术

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Structure and strain state of polar and semipolar InGaN quantum dots

Published:2012-11 Issue: Volume:260 Page:7-12
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Koukoula T.,Lotsari A.,Kehagias Th.,Dimitrakopulos G.P.,Häusler I.,Das A.,Monroy E.,Karakostas Th.,Komninou Ph.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference23 articles.

1. The Blue Laser Diode—The Complete Story;Nakamura,2000

2. InGaN: An overview of the growth kinetics, physical properties and emission mechanisms

3. Composition fluctuation in InGaN quantum wells made from molecular beam or metalorganic vapor phase epitaxial layers

4. Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Systematic Exploration of InGaN/GaN Quantum Well-Based Light Emitting Diodes on Semipolar Orientations;Optics and Spectroscopy;2022-03

2. Recent Developments in Semipolar InGaN Laser Diodes;Semiconductors;2021-02

3. Growth of semi-polar (112¯2) GaN on m-plane sapphire via In-Situ Multiple Ammonia Treatment (I-SMAT) method;Vacuum;2020-04

4. Embedded AlN/GaN multi-layer for enhanced crystal quality and surface morphology of semi-polar (11-22) GaN on m-plane sapphire;Materials Science in Semiconductor Processing;2018-11

5. Electronic Structure of Polar and Semipolar (112¯2)-Oriented Nitride Dot-in-a-Well Systems;Physical Review Applied;2015-06-30

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