The addition of aluminium to ruthenium liner layers for use as copper diffusion barriers-Reference-Cited by-同舟云学术

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The addition of aluminium to ruthenium liner layers for use as copper diffusion barriers

Published:2014-07 Issue: Volume:307 Page:677-681
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

McCoy A.P.,Bogan J.,Walsh L.,Byrne C.,Casey P.,Hughes G.

Funder

SFI TIDA programme

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference24 articles.

1. International Technology Roadmap for Semiconductors,2006

2. Seedless Superfill: Copper Electrodeposition in Trenches with Ruthenium Barriers

3. Electrodeposition of Copper Thin Film on Ruthenium

4. Ruthenium Barrier/Seed Layer for Cu/Low-κ Metallization

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1. The Effect of Ultrasonic Agitation on the Seedless Growth of Cu on Ru-W Thin Films;Materials;2022-12-24

2. Investigating the Efficacy of Hafnium Dioxide Barrier Layers to Halt Copper Oxide Formation in Redistribution Layers for Three-Dimensional (3D) Packaging;The Journal of Physical Chemistry Letters;2022-08-24

3. Seedless Cu Electroplating on Ru-W Thin Films for Metallisation of Advanced Interconnects;International Journal of Molecular Sciences;2022-02-08

4. Investigation of RuZn alloy as barrier to Cu interconnect;Journal of Materials Science: Materials in Electronics;2022-02-01

5. Physical, chemical and electrical characterisation of the diffusion of copper in silicon dioxide and prevention via a CuAl alloy barrier layer system;Materials Science in Semiconductor Processing;2017-06

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