Minority carrier lifetime enhancement in multicrystalline silicon by means of a dual treatment based on porous silicon and sputter-deposition of TiO2:Cr passivation layers-Reference-Cited by-同舟云学术

Minority carrier lifetime enhancement in multicrystalline silicon by means of a dual treatment based on porous silicon and sputter-deposition of TiO2:Cr passivation layers

Published:2012-08 Issue:20 Volume:258 Page:8046-8048
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Hajjaji A.,Rabha M. Ben,Janene N.,Gaidi M.,Bessais B.,Khakani M.A. El

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference23 articles.

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5. High minority carrier lifetime in phosphorus-gettered multicrystalline silicon

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