High minority carrier lifetime in phosphorus-gettered multicrystalline silicon-Reference-Cited by-同舟云学术

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High minority carrier lifetime in phosphorus-gettered multicrystalline silicon

Published:1997-02-24 Issue:8 Volume:70 Page:1017-1019
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cuevas Andrés,Stocks Matthew,Armand Stephane,Stuckings Michael,Blakers Andrew,Ferrazza Francesca

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.118469

Reference1 articles.

1. Contactless determination of current–voltage characteristics and minority‐carrier lifetimes in semiconductors from quasi‐steady‐state photoconductance data

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