Evaluation of defect density by top-view large scale AFM on metamorphic structures grown by MOVPE

Author:

Gocalinska AgnieszkaORCID,Manganaro Marina,Dimastrodonato Valeria,Pelucchi Emanuele

Funder

Irish Program for Research in Third Level Institutions

EU project FP7-ICT

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference20 articles.

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2. Materials for High-Temperature Semiconductor Devices, Committee on Materials for High-Temperature Semiconductor Devices, Commission on Engineering and Technical Systems, National Research Council,1995

3. Compositionally-graded InGaAs–InGaP alloys and GaAsSb alloys for metamorphic InP on GaAs

4. Suppression of threading defects formation during Sb-assisted metamorphic buffer growth in InAs/InGaAs/InP structure

5. Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation

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