Atomic nature of the Schottky barrier height formation of the Ag/GaAs(001)-2 × 4 interface: An in-situ synchrotron radiation photoemission study-Reference-Cited by-同舟云学术

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Atomic nature of the Schottky barrier height formation of the Ag/GaAs(001)-2 × 4 interface: An in-situ synchrotron radiation photoemission study

Published:2017-01 Issue: Volume:393 Page:294-298
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Cheng Chiu-Ping,Chen Wan-Sin,Lin Keng-Yung,Wei Guo-Jhen,Cheng Yi-Ting,Lin Yen-Hsun,Wan Hsien-Wen,Pi Tun-Wen,Tung Raymond T.,Kwo Jueinai,Hong Minghwei

Funder

Ministry of Science and Technology, Taiwan, R.O.C

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference19 articles.

1. The theory of crystal rectifiers;Mott;Proc. R. Soc. (Lond.) A,1939

2. Zur halbleitertheorie der sperrschicht-und spitzengleichter;Schottky;Z. Phys.,1939

3. Schottky-barrier height of ideal metal contacts to GaAs;Waldrop;Appl. Phys. Lett.,1984

4. The physics and chemistry of the Schottky barrier height;Tung;Appl. Phys. Rev.,2014

5. Increased range of Fermi-level stabilization energy at metal/melt-grown GaAs(100) interfaces;Chang;J. Vac. Sci. Technol. B,1991

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