Thin strain-relaxed SiGe grown by ultrahigh vacuum chemical vapor deposition-Reference-Cited by-同舟云学术

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Thin strain-relaxed SiGe grown by ultrahigh vacuum chemical vapor deposition

Published:2006-08 Issue:20 Volume:252 Page:7594-7598
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Xu Xiangdong,Kweh Hockleong,Zhang Zhengcao,Liu Zhihong,Zhou Wei,Zhang Wei,Qian Peixin

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference19 articles.

1. Silicon Device Scaling to the Sub-10-nm Regime

2. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

3. Device structure and electrical characteristics of strained-Si-on-insulator (strained-SOI) MOSFETs

4. Strain relaxation in graded SiGe grown by ultra-high vacuum chemical vapor deposition (UHVCVD)

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-defect metamorphic Si (Ge) epilayers on Si (001) with a buried template of nanocavities for multiple-junction solar cells;Solar Energy Materials and Solar Cells;2016-01

2. A comparison of structures and properties of SiNx and SiOx films prepared by PECVD;Journal of Non-Crystalline Solids;2012-01

3. Different architectures of relaxed Si1−xGex/Si pseudo-substrates grown by low-pressure chemical vapor deposition: Structural and morphological characteristics;Journal of Crystal Growth;2011-08

4. Ion-bombardment induced morphology change of device related SiGe multilayer heterostructures;Applied Surface Science;2009-10

5. Stress Engineering of SiNx Films for Modifying Optical and Mechanical Properties;The Journal of Physical Chemistry C;2009-02-20

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