Crystallite misorientation analysis in semiconductor wafers and ELO samples by rocking curve imaging-Reference-Cited by-同舟云学术

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Crystallite misorientation analysis in semiconductor wafers and ELO samples by rocking curve imaging

Published:2006-10 Issue:1 Volume:253 Page:188-193
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Mikulík P.,Lübbert D.,Pernot P.,Helfen L.,Baumbach T.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference11 articles.

1. The theory and practice of dislocation reduction in GaAs and InP

2. Study of residual strains in wafer crystals by means of lattice tilt mapping

3. Reciprocal space mapping for semiconductor substrates and device heterostructures

4. Synchrotron area diffractometry as a tool for spatial high-resolution three-dimensional lattice misorientation mapping

5. Laterally overgrown structures as substrates for lattice mismatched epitaxy

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1. Visualizing local bending of lattice planes by extending two-azimuth synchrotron X-ray diffraction datasets to asymmetric reflection;Science and Technology of Advanced Materials: Methods;2023-05-12

2. An advanced Bragg diffraction imaging technique to characterize defects: The examples of GaN and AlN;Microelectronic Engineering;2023-05

3. Combining Borrmann and weak-beam diffraction images to study defects in a high-quality CdTe(Zn) crystal;Journal of Applied Crystallography;2023-02-28

4. Grain orientation and transport properties of textured Bi2Te3 alloys;Materials Science in Semiconductor Processing;2021-10

5. X-ray rocking curve imaging on large arrays of extremely tall SiGe microcrystals epitaxial on Si;Journal of Applied Crystallography;2021-06-14

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