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Effect of cobalt addition to Si–Cr solvent in top-seeded solution growth

  • Published:2020-05 Issue: Volume:513 Page:145798
  • ISSN:0169-4332
  • Container-title:Applied Surface Science
  • language:en
  • Short-container-title:Applied Surface Science

Author:

Hyun Koangyong,Kim Seong-Jong,Taishi Toshinori

Funder

Japan Science and Technology Agency

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference15 articles.

1. Review of silicon carbide power devices and their applications;She;IEEE Trans. Ind. Electron.,2017

2. Growth of SiC polytypes by the physical vapour transport technique;Semmelroth;J. Phys.: Condens. Matter,2004

3. Growth of SiC bulk crystals for application in power electronic devices – process design, 2D and 3D X-ray in situ visualization and advanced doping;Wellmann;Cryst. Res. Technol.,2015

4. Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications;Kimoto,2014

5. Analysis of the spiral step structure and the initial solution growth behavior of SiC by real-time observation of the growth interface;Kawanishi;Cryst. Growth Des.,2016

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