Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study-Reference-Cited by-同舟云学术

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Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study

Published:2020-10 Issue: Volume:528 Page:146998
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Piñero J.C.,de Vecchy J.,Fernández D.,Alba G.,Widiez J.,Di Cioccio L.,Lloret F.,Araujo D.,Pernot J.

Funder

European Regional Development Fund

Horizon 2020 Framework Programme

Ministerio de Economía y Competitividad

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference25 articles.

1. Silicon on insulator material technology;Bruel;Elec. Lett.,1995

2. M. Bruel, B.A., A.J. Auberton-Hervé, Smart-Cut: A new Silicon On Insulator material technology based on hydrogen implantation and wafer bonding. Jpn. J. Appl. Phys., 1997. 36(1-3B): p. 1636-1641.

3. Challenges and Progress in Germanium-on-Insulator Materials and Device Development towards ULSI Integration;Augendre;ECS Trans.,2009

4. SOI-type Bonded Structures for Advanced Technology Nodes;Widiez;ECS Trans.,2014

5. Silicon carbide on insulator formation using the Smart Cut process;Di Cioccio;Electron. Lett.,1996

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