Author:
Augendre Emmanuel,Sanchez Loïc,Benaissa Lamine,Signamarcheix Thomas,Hartmann Jean-Michel,Le Royer Cyrille,Vinet Maud,Van Den Daele William,Damlencourt Jean-François,Romanjek Krunoslav,Pouydebasque Arnaud,Batude Perrine,Tabone Claude,Mazen Frédéric,Tauzin Aurélie,Blanc Nicolas,Pellat Michel,Dechamp Jérôme,Zussy Marc,Scheiblin Pascal,Jaud Marie-Anne,Drazek Charlotte,Maurois Cécile,Piccin Matteo,Abbadie Alexandra,Lallement Fabrice,Daval Nicolas,Guiot Eric,Rigny Arnaud,Ghyselen Bruno,Bourdelle Konstantin,Boulanger Fabien,Cristoloveanu Sorin,Billon Thierry,Faynot Olivier,Deguet Chrystel,Clavelier Laurent
Abstract
The recent progress in the fabrication of GeOI substrates and devices is reviewed. Improvements have been made in threading dislocation density, Ge-buried oxide interface passivation, device performance. The potential of various co-integration schemes (lateral and vertical) has been illustrated as alternatives to the fabrication of n-type germanium channel devices. GeOI is also shown to be a versatile platform for the monolithic integration of Si and III-V devices and tunneling field effect transistors.
Publisher
The Electrochemical Society
Cited by
16 articles.
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