Density functional theory study on the reducing agents for atomic layer deposition of tungsten using tungsten chloride precursor-Reference-Cited by-同舟云学术

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Density functional theory study on the reducing agents for atomic layer deposition of tungsten using tungsten chloride precursor

Published:2021-02 Issue: Volume:538 Page:148156
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Hidayat Romel,Chowdhury Tanzia,Kim Yewon,Kim Seongyoon,Mayangsari Tirta Rona,Kim Soo-Hyun,Lee Won-Jun

Funder

Ministry of Trade, Industry and Energy

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference53 articles.

1. Tungsten;Lassner,1999

2. A.A. Zinn, Chemical Vapor Deposition of Tungsten, in: Chem. Met. CVD, Wiley-VCH Verlag GmbH, Weinheim, Germany, 2007, pp. 105–174. doi:10.1002/9783527615858.ch3.

3. V. Kamineni, M. Raymond, S. Siddiqui, F. Mont, S. Tsai, C. Niu, A. Labonte, C. Labelle, S. Fan, B. Peethala, P. Adusumilli, R. Patlolla, D. Priyadarshini, Y. Mignot, A. Carr, S. Pancharatnam, J. Shearer, C. Surisetty, J. Arnold, D. Canaperi, B. Haran, H. Jagannathan, F. Chafik, B. L’Herron, Tungsten and cobalt metallization: A material study for MOL local interconnects, in: 2016 IEEE Int. Interconnect Technol. Conf./Adv. Met. Conf., IEEE, 2016, pp. 105–107. doi:10.1109/IITC-AMC.2016.7507698.

4. T. Moriya, S. Shima, Y. Hazuki, M. Chiba, M. Kashiwagi, Planar Metallization Process - Its Application To Tri-Level Aluminum Interconnection, in: 1983 Int. Electron Devices Meet., IRE, 1983, pp. 550–553. doi:10.1109/IEDM.1983.190565.

5. T. Schloesser, F. Jakubowski, J.v. Kluge, A. Graham, S. Slesazeck, M. Popp, P. Baars, K. Muemmler, P. Moll, K. Wilson, A. Buerke, D. Koehler, J. Radecker, E. Erben, U. Zimmermann, T. Vorrath, B. Fischer, G. Aichmayr, R. Agaiby, W. Pamler, T. Schuster, W. Bergner, W. Mueller, 6F2 buried wordline DRAM cell for 40nm and beyond, in: 2008 IEEE Int. Electron Devices Meet., IEEE, 2008, pp. 1–4. doi:10.1109/IEDM.2008.4796820.

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