Interfacial ZnS passivation for improvement of transparent ZnO/CuI diode characteristics-Reference-Cited by-同舟云学术

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Interfacial ZnS passivation for improvement of transparent ZnO/CuI diode characteristics

Published:2021-01 Issue: Volume:536 Page:147645
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Kim Taehyeon,Son Changjin,Lee Junwoo,Oh Eunseok,Li Shujie,Chang Chih-Hung,Lim Sangwoo

Funder

National Research Foundation of Korea

Ministry of Education

Innovation Fund

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference58 articles.

1. Fabrication and characterization of heteroepitaxial p-n junction diode composed of wide-gap oxide semiconductors p-ZnRh2O4/n-ZnO;Ohta;Appl. Phys. Lett.,2003

2. Zinc oxide nanostructures: growth, properties and applications;Wang;J. Phys.: Condens. Matter,2004

3. A comprehensive review of ZnO materials and devices;Özgür;J. Appl. Phys.,2005

4. Recent advances in ZnO-based light-emitting diodes;Choi;IEEE Trans. Electr. Dev.,2010

5. Fundamental limitations of wide-bandgap semiconductors for light-emitting diodes;Park;ACS Energy Lett.,2018

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1. Transparent p-type copper iodide for next-generation electronics: fundamental physics and recent research trends;Soft Science;2024-09-14

2. High storage and operational stability self-powered UV photodetector based on p-CuI/n-GaN heterojunction prepared by thermal evaporation method;Applied Surface Science;2023-12

3. Effect of dissolved oxygen on surface oxidation and dissolution of InGaAs and its impact on AsGa, AsIn, and VAs defect generation;Materials Science in Semiconductor Processing;2023-10

4. Transparent p-n heterojunction thin film diodes based on p-CuCrO2 and n-In2O3;Thin Solid Films;2023-09

5. Transparent p–n Junction in Cu₂O/ZnS/ZnO Core–Shell Nanoarrays via In Situ Sulfuration for Enhanced Photovoltaic Stability;ACS Applied Nano Materials;2023-06-19

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