Photoelectrochemical etching of ultra-wide bandgap β-Ga2O3 semiconductor in phosphoric acid and its optoelectronic device application-Reference-Cited by-同舟云学术

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Photoelectrochemical etching of ultra-wide bandgap β-Ga2O3 semiconductor in phosphoric acid and its optoelectronic device application

Published:2021-02 Issue: Volume:539 Page:148130
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Choi Yong Ha,Baik Kwang Hyeon,Kim Suhyun,Kim Jihyun

Funder

Korea Institute of Energy Technology Evaluation and Planning

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference41 articles.

1. Observation of nanometer-sized crystalline grooves in as-grown β-Ga2O3 single crystals;Hanada;Jpn. J. Appl. Phys.,2016

2. Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics;Kim;PCCP,2016

3. Demonstration of mechanically exfoliated β-Ga2O3/GaN p-n heterojunction;Montes;Appl. Phys. Lett.,2019

4. Revelation of dislocations in β-Ga2O3 substrates grown by edge-defined film-fed growth;Yao;Phys. Status Solidi A,2020

5. Radiation damage effects in Ga2O3 materials and devices;Kim;J. Mater. Chem. C,2019

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1. Etching of Ga₂O₃: an important process for device manufacturing;Journal of Physics D: Applied Physics;2024-09-12

2. Heated-H3PO4 etching of (001) β-Ga2O3;Applied Physics Letters;2024-07-01

3. Liquid Metal‐Printed Semiconductors;Advanced Engineering Materials;2024-05-29

4. The application of a novel amine collector, 1-(dodecylamino)-2-propanol, in the reverse flotation separation of apatite and quartz;Journal of Molecular Liquids;2024-04

5. Selective and nonselective plasma etching of (Al0.18Ga0.82)2O3/ Ga2O3 heterostructures;Journal of Vacuum Science & Technology A;2024-02-14

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