Carrier transport through near-ideal interface for WSe2 van der Waals homojunction diode-Reference-Cited by-同舟云学术

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Carrier transport through near-ideal interface for WSe2 van der Waals homojunction diode

Published:2021-03 Issue: Volume:542 Page:148499
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Lee Juchan,Thanh Duong Ngoc,Park Dae Young,Park Chul Ho,Jeong Byeong Geun,Jeong Mun Seok

Funder

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference40 articles.

1. 2D materials and van der Waals heterostructures;Novoselov;Science,2016

2. Magnetic 2D materials and heterostructures;Gibertini;Nat. Nanotechnol.,2019

3. Thickness-dependent charge transport in few-layer MoS2 field-effect transistors;Lin;Nanotechnology,2016

4. Electrical transport properties of single-layer WS2;Ovchinnikov;ACS Nano,2014

5. Carrier-type modulation and mobility improvement of thin MoTe2;Qu;Adv. Mater.,2017

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical role of sulfur vacancies in MoS2: Transient current approach;Applied Surface Science;2023-03

2. High-performance MoS2/p+-Si heterojunction field-effect transistors by interface modulation;Nano Research;2022-04-30

3. Interface Trap Suppression and Electron Doping in Van der Waals Materials Using Cross-Linked Poly(vinylpyrrolidone);ACS Applied Materials & Interfaces;2021-11-11

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