Interface Trap Suppression and Electron Doping in Van der Waals Materials Using Cross-Linked Poly(vinylpyrrolidone)-Reference-Cited by-同舟云学术

Interface Trap Suppression and Electron Doping in Van der Waals Materials Using Cross-Linked Poly(vinylpyrrolidone)

Published:2021-11-11 Issue:46 Volume:13 Page:55489-55497
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Lee Juchan¹²,Bang Seungho²,Park Hyeon Jung¹,Park Dae Young¹^ORCID,Park Chulho²,Duong Ngoc Thanh³,Won Yo Seob²,Jang Jiseong¹²,Oh Hye Min⁴,Choi Soo Ho⁵,Kim Ki Kang²⁵,Jeong Mun Seok¹⁶^ORCID

Affiliation:

1. Department of Physics, Hanyang University (HYU), Seoul 04763, Republic of Korea

2. Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea

3. Department of Materials Science and Engineering, Phenikaa University, Hanoi 12116, Viet Nam

4. Department of Physics, Kunsan National University, Kunsan 54150, Republic of Korea

5. Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science, Suwon 16419, Republic of Korea

6. Department of Energy Engineering, Hanyang University (HYU), Seoul 04763, Republic of Korea

Funder

Samsung Science and Technology Foundation

National Research Foundation of Korea

U.S. Department of Defense

Institute for Basic Science

Korea Evaluation Institute of Industrial Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c12968

Reference49 articles.

1. Electrical contacts to two-dimensional semiconductors

2. Measurement of mobility in dual-gated MoS2 transistors

3. Magnetic 2D materials and heterostructures

4. Multifunctional high-performance van der Waals heterostructures

5. Black phosphorus field-effect transistors

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