Harnessing Persistent Photocurrent in a 2D Semiconductor–Polymer Hybrid Structure: Electron Trapping and Fermi Level Modulation for Optoelectronic Memory-Reference-Cited by-同舟云学术

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Harnessing Persistent Photocurrent in a 2D Semiconductor–Polymer Hybrid Structure: Electron Trapping and Fermi Level Modulation for Optoelectronic Memory

Published:2024-07-10 Issue:32 Volume:24 Page:9889-9897
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Bang Seungho¹^ORCID,Kang Wooyoung¹,Kim Dohyeong¹,Suh Hyeong Chan¹,Kim Dong Hyeon¹²,Kwon Chan¹,Jo Jieun¹,Kim Ji-hong¹,Ko Hayoung²^ORCID,Kim Ki Kang²^ORCID,Ahn Jinho³,Jeong Mun Seok¹^ORCID

Affiliation:

1. Department of Physics, Hanyang University (HYU), Seoul 04763, Republic of Korea

2. Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea

3. Division of Materials Science and Engineering, Hanyang University (HYU), Seoul 04763, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.4c02173

Reference42 articles.

1. Bandgap engineering of two-dimensional semiconductor materials

2. 2D Semiconductor‐Based Optoelectronics for Artificial Vision

3. Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

4. Augmented Quantum Yield of a 2D Monolayer Photodetector by Surface Plasmon Coupling

5. Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices

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