Tris(dimethylamido)aluminum(III) and N2H4: Ideal precursors for the low-temperature deposition of large grain, oriented c-axis AlN on Si via atomic layer annealing-Reference-Cited by-同舟云学术

Tris(dimethylamido)aluminum(III) and N2H4: Ideal precursors for the low-temperature deposition of large grain, oriented c-axis AlN on Si via atomic layer annealing

Published:2021-07 Issue: Volume:554 Page:149656
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Ueda Scott T.,McLeod Aaron^ORCID,Alvarez Dan,Moser Daniel,Kanjolia Ravindra,Moinpour Mansour,Woodruff Jacob,Kummel Andrew C.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference41 articles.

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3. Aluminum Nitride for Heatspreading in RF IC’s;La Spina;Solid. State. Electron.,2008

4. Effect of an AlN Buffer Layer on the Epitaxial Growth of InN by Molecular-Beam Epitaxy;Lu;Appl. Phys. Lett.,2001

5. Crystalline Structure of AlGaN Epitaxy on Sapphire Using AlN Buffer Layers;Ponce;Appl. Phys. Lett.,1994

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