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Current-voltage characterization of GaAs detectors and their holders irradiated by high-energy electrons

  • Published:2021-06 Issue: Volume:552 Page:149474
  • ISSN:0169-4332
  • Container-title:Applied Surface Science
  • language:en
  • Short-container-title:Applied Surface Science

Author:

Šagátová Andrea,Kováčová Eva,Novák Andrej,Fülöp Marko,Zaťko Bohumír

Funder

Slovenská Akadémia Vied

Agentúra na Podporu Výskumu a Vývoja

Ministerstvo školstva, vedy, výskumu a športu Slovenskej republiky

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference7 articles.

1. GaAs detectors irradiated by low doses of electrons;Sagatova;JINST,2014

2. Influence of electron irradiation on properties of semi-insulating GaAs detectors;Sagatova;Radiat. Effects Defects Solids: Incorporat. Plasma Sci. Plasma Technol. Taylor Francis,2015

3. Investigation of the radiation hardness of GaAs sensors in an electron beam;Afanaciev;JINST,2012

4. Analysis of radiation effects on some properties of GaAs: Cr and Si sensors exposed to 22 MeV electron beam;Torres;Nucleus N,2018

5. Radiation hardness limits in gamma spectrometry of semi-insulating GaAs detectors irradiated by 5MeV electrons;Sagatova;JINST,2020

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