Influence of electron irradiation on properties of semi-insulating GaAs detectors-Reference-Cited by-同舟云学术

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Influence of electron irradiation on properties of semi-insulating GaAs detectors

Published:2014-11-11 Issue:3 Volume:170 Page:192-198
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Šagátová Andrea,Zaťko Bohumír,Sedlačková Katarína,Pavlovič Márius,Nečas Vladimír

Funder

ministry of education of slovak rep

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

http://www.tandfonline.com/doi/pdf/10.1080/10420150.2014.977285

Reference9 articles.

1. Relativistic electron fluxes and dose rate variations observed on the international space station

2. Investigation of the radiation hardness of GaAs sensors in an electron beam

3. Influence of top contact topology on detection properties of semi-insulating GaAs detectors

4. Experimental analysis of the electric field distribution in GaAs radiation detectors

5. Defects introduced in the electron irradiation of GaAs: Identification with the positron lifetime spectroscopy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Current-voltage characterization of GaAs detectors and their holders irradiated by high-energy electrons;Applied Surface Science;2021-06

2. Influence of holder quality on radiation hardness of Si GaAs detector;APPLIED PHYSICS OF CONDENSED MATTER (APCOM 2019);2019

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