High resistance ratio of bipolar resistive switching in a multiferroic/high-K Bi(Fe0.95Cr0.05)O3/ZrO2/Pt heterostructure-Reference-Cited by-同舟云学术

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High resistance ratio of bipolar resistive switching in a multiferroic/high-K Bi(Fe0.95Cr0.05)O3/ZrO2/Pt heterostructure

Published:2018-03 Issue: Volume:434 Page:687-692
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Dong B.W.,Miao Jun,Han J.Z.,Shao F.,Yuan J.,Meng K.K.,Wu Y.,Xu X.G.,Jiang Y.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference46 articles.

1. Enhanced switching uniformity in AZO/ZnO1-x/ITO transparent resistive memory devices by bipolar double forming;Simanjuntak;Appl. Phys. Lett.,2015

2. Oxygen migration induced resistive switching effect and its thermal stability in W/TaOx/Pt structure;Chen;Appl. Phys. Lett.,2012

3. Reduction in reset current of unipolar NiO-based resistive switching through nickel interfacial layer;Lee;Appl. Phys. Lett.,2010

4. Evolution of RESET current and filament morphology in low-power HfO2 unipolar resistive switching memory;Hou;Appl. Phys. Lett.,2011

5. Resistive switching mechanism of Ag/ZrO2:Cu/Pt memory cell;Long;Appl. Phys. A,2011

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1. Neuromorphic Computing of Optoelectronic Artificial BFCO/AZO Heterostructure Memristors Synapses;Nanomaterials;2024-03-27

2. Electric field tuning of multistate and nonvolatile resistance variation in amorphous Fe75Si25/PMN-0.3PT (0 0 1) heterostructures;Results in Physics;2024-01

3. Improvement of memristive switching of Pb(Zr0.52Ti0.48)O3/Nb:SrTiO3 heterostructures via La doping;Vacuum;2023-12

4. Piezo-Enhanced Photocatalytic Performance of Bismuth Ferrite-Based Thin Film for Organic Pollutants Degradation;Coatings;2023-08-12

5. Polarization-field tuning and stable performance of the resistance switching in a ferroelectric/amorphous PbZr0.2Ti0.8O3/La2Zr2O7 heterostructure;Journal of Materials Science: Materials in Electronics;2023-06

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