Novel bipolar magnetic semiconductor materials formed by adsorption of methyl or halomethyles on the graphene: A spin-polarized density functional theory study-Reference-Cited by-同舟云学术

Novel bipolar magnetic semiconductor materials formed by adsorption of methyl or halomethyles on the graphene: A spin-polarized density functional theory study

Published:2022-04 Issue: Volume:581 Page:152338
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Aminzadeh H.,Nasresfahani Sh.

Funder

Shiraz University

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference65 articles.

1. The end of moore's law: A new beginning for information technology;Theis;Comput. Sci. Eng.,2017

2. Spintronic devices: a promising alternative to CMOS devices;Barla;J. Comput. Electron.,2021

3. GdFe0.8Ni0.2O3: A Multiferroic material for low power spintronic devices with high storage capacity, ACS Appl;Chang;Mater. Interfaces,2019

4. Cr2TiC2-based double MXenes: novel 2D bipolar antiferromagnetic semiconductor with gate-controllable spin orientation toward antiferromagnetic spintronics;He;Nanoscale,2019

5. First-principles design of spintronics materials;Li;Nat. Sci. Rev.,2016

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strain tunable high absorptivity and carrier mobility in two-dimensional multiferroic Cr2SOCl2 monolayer;Applied Physics Letters;2024-06-10

2. Magnetic biochar prepared by a dry process for the removal of sulfonamides antibiotics from aqueous solution;Journal of Molecular Liquids;2024-04

3. A novel 2D intrinsic metal-free ferromagnetic semiconductor Si₃C₈ monolayer;Physical Chemistry Chemical Physics;2024

4. A high loading nanocarrier for the 5-fluorouracil anticancer drug based on chloromethylated graphene;Physical Chemistry Chemical Physics;2024

5. Two-dimensional transition metal halide PdX ₂ (X = F, Cl, Br, I): A promising candidate of bipolar magnetic semiconductors;Chinese Physics B;2023-11-01